HiPerFAST
TM
IGBT
Surface Mountable
IXGH50N60A
V
CES
IXGH50N60AS I
C25
V
CE(sat)
t
fi
= 600 V
=
75 A
= 2.7 V
= 275 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load, L = 30
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
= 100
@ 0.8 V
CES
250
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
TO-247 SMD
(50N60AS)
G
E
C (TAB)
TO-247 AD
(50N60A)
C (TAB)
W
°C
°C
°C
°C
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
TO-247 SMD
TO-247 AD
1.13/10 Nm/lb.in.
4
6
g
g
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High frequency IGBT
l
High current handling capability
l
2nd generation HDMOS
TM
process
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
2.7
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
High power density
l
Suitable for surface mounting
l
Switching speed for high frequency
applications
l
Easy to mount with 1 screw, TO-247
(insulated mounting screw hole)
l
© 1996 IXYS All rights reserved
92797H(9/96)
IXYS [ IXYS CORPORATION ]
