HiPerFAST
TM
IGBT
IXGH
IXGK
IXGT
IXGJ
50N60B
50N60B
50N60B
50N60B
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 120
TO-247 AD (IXGH)
= 600
= 75
= 2.3
V
A
V
ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
50
200
I
CM
= 100
@ 0.8 V
CES
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
G
C
E
C (TAB)
TO-268 (D3) ( IXGT)
G
E
TO-268 Leaded (IXGJ)
G
C
E
C (TAB)
(TAB)
TO-264 AA (IXGK)
Mounting torque
TO-247AD
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
300
°C
g
g
g
C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-264
TO-268
E
C (TAB)
D = Drain
TAB = Collector
6
10
4
G = Gate
E = Emitter
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.0
200
1
±100
2.3
V
V
µA
mA
nA
V
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOS
TM
process
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(insulated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
95585F(12/02)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250µA, V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
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