HiPerFAST
TM
IGBT with Fast
Diode
IXGH 50N90B2D1
IXGK 50N90B2D1
IXGX 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
Preliminary Data Sheet
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
F
C
Weight
Mounting torque (TO-247, TO-264)
Mounting force (PLUS247)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load @
≤
600V
T
C
= 25°C
Maximum Ratings
900
900
±
20
±
30
75
50
200
I
CM
= 100
400
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 900 V
= 75 A
= 2.7 V
= 200 ns
TO-247 (IXGH)
C (TAB)
G
C
E
PLUS247 (IXGX)
C (TAB)
W
°C
°C
°C
°C
G
D
G
C
E
TO-264 (IXGK)
1.13/10Nm/lb.in.
20..120 / 4.5..25
TO-247
TO-264
PLUS247
6
10
6
N/lb
g
g
g
S
C (TAB)
C = Collector
TAB = Collector
G = Gate
E = Emitter
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±
20 V
I
C
= I
C110
, V
GE
= 15 V, Note 1
T
J
= 150°C
Characteristic Values
min. typ. max.
3.0
5.0
50
1
±
100
2.2
T
J
= 125°C
2.7
V
μA
mA
nA
V
V
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
DS99393(01/06)
© 2006 IXYS All rights reserved
IXYS [ IXYS CORPORATION ]
