Advance Technical Data
HiPerFAST
TM
IGBT
Optimized for 10-25 kHz hard
switching and up to 100 KHz
resonant switching
IXGH 60N60B2
IXGT 60N60B2
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 75 A
< 1.8 V
= 100 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load @
≤
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
60
300
I
CM
= 150
500
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
C (TAB)
G
C
E
C = Collector,
TAB = Collector
W
°C
°C
°C
°C
Features
G = Gate,
E = Emitter,
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
TO-247 AD
TO-268 SMD
1.13/10 Nm/lb.in.
6
4
g
g
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
3.0
T
J
= 25°C
T
J
= 150°C
5.0
50
1
±100
T
J
= 25°C
1.8
V
µA
mA
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
Note 1.
© 2003 IXYS All rights reserved
DS99113(11/03)
IXYS [ IXYS CORPORATION ]
