Advance Technical Information
HiPerFAST
TM
IGBT
C2-Class High Speed
IGBT
IXGA
IXGP
IXGA
IXGP
16N60C2
16N60C2
16N60C2D1
16N60C2D1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 40 A
= 3.0 V
= 35 ns
D1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
D110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 110°C (IXG_16N60C2D1 diode)
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 22
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
40
16
11
100
I
CM
= 32
@0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
G
G
C
TO-263 (IXGA)
C
(TAB)
TO-220 (IXGP)
W
°C
°C
°C
Features
°C
°C
g
g
G = Gate
E = Emitter
C E
C
(TAB)
C = Collector
TAB = Collector
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in.
300
260
4
2
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
TO-220
TO-263
Very high frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.5
16N60C2
16N60C2D1
5.0
25
50
±100
3.0
T
J
=125°C
2.1
V
µA
µA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 12 A
,
V
GE
= 15 V
Note 2
© 2004 IXYS All rights reserved
DS99142A(3/04)
IXYS [ IXYS CORPORATION ]
