IXLF 19N250A
High Voltage IGBT
in High Voltage
ISOPLUS i4-PAC
TM
I
C25
= 32 A
V
CES
= 2500 V
V
CE(sat)
= 3.2 V
t
f
= 250 ns
5
1
1
2
2
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
P
tot
T
C
= 25°C
T
C
= 90°C
V
GE
=
±
15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
2500
±
20
32
19
70
1200
250
V
V
A
A
A
V
W
Features
•
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
•
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered
E72873
Applications
•
switched mode power supplies
•
DC-DC converters
•
resonant converters
•
laser generators, x ray generators
•
discharge circuits
5
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.2
4.7
5
0.2
500
100
50
600
250
15
30
2.28
103
43
142
3.9
8
0.15
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
pF
pF
nC
0.5 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
Gon
R
thJC
I
C
= 19 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 1500 V; I
C
= 19 A
V
GE
= ±15 V; R
G
= 47
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 1500V; V
GE
= 15 V; I
C
= 19 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-4
407
IXYS [ IXYS CORPORATION ]
