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IXSH40N60B 参数 Datasheet PDF下载

IXSH40N60B图片预览
型号: IXSH40N60B
PDF下载: 下载PDF文件 查看货源
内容描述: 高速IGBT [High Speed IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 2 页 / 58 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXSH40N60B的Datasheet PDF文件第2页  
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B V
CES
=
=
IXST 40N60B I
C25
V
CE(sat)
=
t
fi typ
=
600V
75A
2.2V
100 ns
Preliminary data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 2.7
W
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
40
150
I
CM
= 80
@ 0.8 V
CES
10
280
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
°C
°C
°C
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low V
CE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast Fall Time for switching speeds
up to 50 kHz
Applications
• AC and DC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
Features
G = Gate
E = Emitter
TAB = Collector
G
E
(TAB)
(TAB)
G
C
E
TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in.
6
300
g
°C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25°C
T
J
= 125°C
7
25
1
±100
2.2
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 4 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
© 2000 IXYS All rights reserved
1-2