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IXSN52N60AU1 参数 Datasheet PDF下载

IXSN52N60AU1图片预览
型号: IXSN52N60AU1
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT与二极管Combi机包 - 短路SOA能力 [IGBT with Diode Combi Pack - Short Circuit SOA Capability]
分类和应用: 二极管双极性晶体管
文件页数/大小: 5 页 / 150 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXSN52N60AU1的Datasheet PDF文件第1页浏览型号IXSN52N60AU1的Datasheet PDF文件第2页浏览型号IXSN52N60AU1的Datasheet PDF文件第4页浏览型号IXSN52N60AU1的Datasheet PDF文件第5页  
IXSN52N60AU1
Fig.1 Saturation Characteristics
80
T
J
= 25°C
V
GE
= 15V
13V
Fig.2 Output Characterstics
200
180
160
140
120
100
80
60
40
20
0
5
0
2
4
6
8
9V
7V
11V
T
J
= 25°C
V
GE
= 15V
70
60
I
C
- Amperes
50
40
30
20
10
9V
7V
0
0
1
2
3
4
I
C
- Amperes
11V
13V
10 12 14 16 18 20
V
CE
- Volts
V
CE
- Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
T
J
= 25°C
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4
V
GE
=15V
I
C
= 80A
V
CE(sat)
- Normalized
1.3
1.2
1.1
1.0
0.9
I
C
= 20A
I
C
= 40A
V
CE
- Volts
6
5
4
3
2
1
0
8
9
10
11
12
13
14
15
I
C
= 20A
I
C
= 40A
I
C
= 80A
0.8
0.7
-50
-25
0
25
50
75
100 125 150
V
GE
- Volts
T
J
- Degrees C
Fig.5 Input Admittance
80
V
CE
= 10V
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
BV / V
GE(th)
- Normalized
70
60
1.2
1.1
1.0
0.9
0.8
0.7
-50
BV
CES
I
C
= 3mA
I
C
- Amperes
50
40
30
20
10
0
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
V
GE8th)
I
C
= 4mA
4
5
6
7
8
9
10
11
12
13
-25
0
25
50
75
100 125 150
V
GE
- Volts
T
J
- Degrees C
© 2000 IXYS All rights reserved
3-5