IXSN80N60AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
46
8500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
650
120
335
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH,
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
88
158
140
220
300
450
10
140
220
8
520
550
13
600
600
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.25 K/W
0.05
K/W
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
miniBLOC, SOT-227 B
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 60 A; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
25.07 0.968
0.1 -0.002
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.8
19
175
35
V
A
ns
ns
I
F
= 50 A, V
GE
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= 50 A, V
GE
= 0 V, -di
F
/dt = 480 A/ms
V
R
= 360 V
T
J
= 125°C
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V T
J
= 25°C
50
0.80 K/W
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
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