High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 05N100
V
DSS
IXTP 05N100
I
D25
R
DS(on)
= 1000 V
= 750 mA
= 17
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
Maximum Ratings
TO-220AB (IXTP)
1000
1000
±30
±40
750
3
1.0
V
V
V
V
mA
A
A
mJ
mJ
V/ns
W
°C
°C
°C
Features
International standard packages
High voltage, Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
g
°C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
S
D (TAB)
GD
S
D (TAB)
TO-263 AA (IXTA)
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 47
Ω
T
C
= 25°C
5
100
3
40
-55 ... +150
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
4
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
15
25
500
17
V
V
nA
µA
µA
Ω
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 25
µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 375 mA
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS98736B(10/04)
IXYS [ IXYS CORPORATION ]
