Advanced Technical Information
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
IXTQ 36N30P
IXTA 36N30P
IXTP 36N30P
V
DSS
I
D25
R
DS(on)
=
=
=
300 V
36 A
Ω
110
mΩ
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
300
300
±20
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G = Gate
S = Source
G
S
(TAB)
D = Drain
TAB = Drain
G
D S
(TAB)
G
D
S
(TAB)
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 10
Ω
T
C
= 25°C
36
90
36
30
1.0
10
300
-55 ... +150
150
-55 ... +150
TO-220 (IXTP)
TO-263 (IXTA)
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
300
260
Features
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
M
d
Weight
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±100
25
250
92
110
V
V
nA
µA
µA
mΩ
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS99155(03/04)
IXYS [ IXYS CORPORATION ]
