IXTH 12N120
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
V
DSS
=
1200 V
I
D (cont)
=
12 A
R
DS(on)
=
1.4
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
1200
1200
±30
±40
12
48
12
30
1.0
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
W
°C
°C
°C
g
°C
TO-247 AD
Continuous
Transient
T
C
T
C
T
C
T
C
T
C
= 25°C
= 25°C, pulse width limited by T
JM
= 25°C
= 25°C
= 25°C
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
Mounting torque
1.13/10 Nm/lb.in.
6
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
3
5
±100
T
J
= 25°C
T
J
= 125°C
25
3
1.4
V
V
nA
µA
mA
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS98937E(04/04)
IXYS [ IXYS CORPORATION ]
