MegaMOS
TM
FET
IXTH / IXTM 10N100
IXTH / IXTM 12N100
V
DSS
1000 V
1000 V
I
D25
10 A
12 A
R
DS(on)
1.20
Ω
1.05
Ω
N-Channel Enhancement Mode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
10N100
12N100
10N100
12N100
Maximum Ratings
1000
1000
±20
±30
10
12
40
48
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2
4.5
±100
T
J
= 25°C
T
J
= 125°C
250
1
1.20
1.05
V
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
l
I
GSS
I
DSS
R
DS(on)
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
nA
µA
mA
Ω
Ω
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
l
l
10N100
12N100
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
l
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µA
V
l
V
DSS
V
GS
= 0 V, I
D
= 3 mA
l
l
l
l
l
91540E(5/96)
1-4
IXYS [ IXYS CORPORATION ]
