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IXTH13N80 参数 Datasheet PDF下载

IXTH13N80图片预览
型号: IXTH13N80
PDF下载: 下载PDF文件 查看货源
内容描述: MegaMOSFET [MegaMOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 4 页 / 102 K
品牌: IXYS [ IXYS CORPORATION ]
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V
DSS
I
D25
R
DS(on)
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
11 A 0.95
13 A 0.80
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
11N80
13N80
11N80
13N80
Maximum Ratings
800
800
±20
±30
11
13
44
52
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
q
q
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
q
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2
4.5
±100
T
J
= 25°C
T
J
= 125°C
11N80
13N80
250
1
0.95
0.80
V
V
nA
µA
mA
Applications
q
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
q
q
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
q
q
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
I
XYS reserves the right to change limits, test conditions, and dimensions.
915380F (5/96)
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629