IXTH 5 N100
IXTM 5 N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
4
6
2600
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
180
45
35
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
Ω,
(External)
20
100
30
88
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
21
38
100
50
200
80
130
30
70
0.7
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
1
IXTH 5 N100A
IXTM 5 N100A
TO-247 AD (IXTH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
5
20
1.5
900
A
A
V
ns
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A
1
2.2
2.54
.087 .102
A
2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b
1
1.65
2.13
.065 .084
b
2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
TO-204AA (IXTM) Outline
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
A
A1
∅
b
∅
D
e
e1
Millimeter
Min.
Max.
6.4
11.4
3.42
.97
1.09
22.22
10.67 11.17
5.21
5.71
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
L
7.93
∅
p 3.84
4.19
∅p
1 3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
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