V
DSS
I
D25
R
DS(on)
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 7P50
IXTH 8P50
-500V -7 A 1.5
Ω
-500V -8 A 1.2
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
J
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
7P50
8P50
7P50
8P50
7P50
8P50
Maximum Ratings
-500
-500
±20
±30
-7
-8
-28
-32
-7
-8
30
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
W
°
C
°
C
°
C
°
C
Nm/lb.in.
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
•
International standard package
•
Low R
HDMOS process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
TM
DS (on)
JEDEC TO-247 AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
6
•
Low package inductance (<5 nH)
- easy to drive and to protect
rated
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
-500
0.054
-3.0
-0.122
±100
T
J
= 25°C
T
J
= 125°C
-200
-1
-5.0
V
%/K
V
%/K
nA
µA
mA
Applications
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= -250
µA
BV
DSS
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
µA
V
GS(th)
Temperature Coefficient
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= -10 V, I
D
= 0.5 I
D25
•
High side switching
•
Push-pull amplifiers
•
DC choppers
•
Automatic test equipment
Advantages
•
Easy to mount with 1 screw
•
Space savings
•
High power density
(isolated mounting screw hole)
7P50
8P50
R
DS(on)
Temperature Coefficient
1.5
Ω
1.2
Ω
0.6 %/K
© 2001 IXYS All rights reserved
94534E (6/01)
IXYS [ IXYS CORPORATION ]
