PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 2N60P
IXTY 2N60P
V
DSS
I
D25
R
DS(on)
= 500
=
2
≤
5.1
V
A
Ω
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 50
Ω
T
C
= 25° C
Maximum Ratings
600
V
600
V
±
30
±
40
2
4
2
10
150
10
55
-55 ... +150
150
-55 ... +150
V
V
A
A
A
mJ
mJ
V/ns
TO-220 (IXTP)
G
D S
(TAB)
TO-252 AA (IXTY)
G
W
°C
°C
°C
°C
°C
G = Gate
S = Source
S
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-252
(TO-220)
300
260
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
4
0.8
g
g
Features
l
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 25
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.0
±50
1
50
5.1
V
V
nA
µA
µA
Ω
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Easy to mount
Space savings
High power density
© 2006 IXYS All rights reserved
DS99422E(04/06)
IXYS [ IXYS CORPORATION ]
