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IXTQ52N30P 参数 Datasheet PDF下载

IXTQ52N30P图片预览
型号: IXTQ52N30P
PDF下载: 下载PDF文件 查看货源
内容描述: PolarHT功率MOSFET [PolarHT Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 5 页 / 577 K
品牌: IXYS [ IXYS CORPORATION ]
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Advanced Technical Information
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
IXTQ52N30P
IXTT52N30P
V
DSS
I
D25
R
DS(on)
= 300 V
= 52 A
= 66
mΩ
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4
T
C
= 25°C
Maximum Ratings
300
300
±20
±30
52
150
52
30
1.0
10
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-3P (IXTQ)
G
C
E
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-268
(TO-3P)
300
1.13/10 Nm/lb.in.
5.5
5.0
g
g
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±100
25
250
57
66
V
V
nA
µA
µA
mΩ
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2004 IXYS All rights reserved
DS99115A(10/04)