PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
IXTH 96N20P
IXTQ 96N20P
IXTT 96N20P
V
DSS
I
D25
R
DS(on)
= 200 V
= 96 A
Ω
= 24
mΩ
TO-247 (IXTH)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-247
TO-268
(TO-3P, TO-247)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
200
200
±20
96
75
225
60
50
1.5
10
600
-55 ... +175
175
-55 ... +150
300
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-268 (IXTT)
G
D
S
(TAB)
G
D
S
(TAB)
TO-3P (IXTQ)
1.13/10 Nm/lb.in.
5.5
6.0
5.0
g
g
g
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
Features
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150°C
Characteristic Values
Min. Typ.
Max.
200
2.5
5.0
±100
25
250
24
V
V
nA
µA
µA
mΩ
Advantages
Easy to mount
Space savings
High power density
DS99117D(01/05)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
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IXYS [ IXYS CORPORATION ]
