PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 140N10P
IXTT 140N10P
V
DSS
I
D25
R
DS(on)
=
=
≤
100 V
140 A
11 mΩ
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
100
100
±20
±30
140
75
300
60
80
2.5
10
600
-55 ... +175
175
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°
C
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
(TO-3P)
300
260
Features
l
l
1.13/10 Nm/lb.in.
5.5
5.0
g
g
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 175° C
Characteristic Values
Min. Typ.
Max.
100
3.0
5.0
±100
25
500
11
9
V
V
nA
µA
µA
m
Ω
m
Ω
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
V
GS
= 15 V, I
D
= 300 A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99133E(12/05)
IXYS [ IXYS CORPORATION ]
