High Voltage MOSFET
N-Channel, Depletion Mode
IXTP 01N100D
IXTU 01N100D
IXTY 01N100D
V
DSS
= 1000
V
I
D25
= 100 mA
Ω
R
DS(on)
= 110
Preliminary Data Sheet
Symbol
V
DSX
V
DGX
V
GS
V
GSM
I
DSS
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
Continuous
Transient
T
C
= 25°C; T
J
= 25°C to 150°C
T
C
= 25°C, pulse width limited by T
J
T
C
= 25°C
T
A
= 25°C
Maximum Ratings
1000
1000
± 20
± 30
100
400
25
1.1
-55 ... +150
150
-55 ... +150
V
V
V
V
mA
mA
W
W
°C
°C
°C
°C
°C
Nm/lb.
g
g
g
TO-252 (IXTY)
G
D
S
D (TAB)
G
DS
D (TAB)
TO-220 (IXTP)
TO-251 (IXTU)
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
Mounting torque
TO-220
TO-220
TO-251
TO-252
300
300
1.3 / 10
4
0.8
0.8
G
S
D (TAB)
Pins: 1 - Gate
2 - Drain
3 - Source TAB - Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSX
V
GS(off)
I
GSS
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= -10 V, I
D
= 25
μA
V
DS
= 25V, I
D
= 25
μA
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= V
DSX
, V
GS
= -10 V
V
GS
= 0 V, I
D
= 50 mA
V
GS
= 0 V, V
DS
= 25V
T
J
= 125°C
Note 1
Note 1
90
100
Characteristic Values
min. typ. max.
1000
-2.5
-5
±100
10
250
110
V
V
nA
μA
μA
Ω
mA
Features
Normally ON mode
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching speed
Applications
Level shifting
Triggers
Solid state relays
Current regulators
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98809B (01/06)
IXYS [ IXYS CORPORATION ]
