欢迎访问ic37.com |
会员登录 免费注册
发布采购

MCC26-12IO8B 参数 Datasheet PDF下载

MCC26-12IO8B图片预览
型号: MCC26-12IO8B
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块可控硅/二极管模块 [Thyristor Modules Thyristor/Diode Modules]
分类和应用: 可控硅二极管
文件页数/大小: 4 页 / 165 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号MCC26-12IO8B的Datasheet PDF文件第2页浏览型号MCC26-12IO8B的Datasheet PDF文件第3页浏览型号MCC26-12IO8B的Datasheet PDF文件第4页  
MCC 26
MCD 26
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2x50 A
I
TAVM
= 2x32 A
V
RRM
= 800-1600 V
TO-240 AA
2
1
3
6
7
V
RSM
V
DSM
V
900
1300
1500
1700
V
RRM
V
DRM
V
800
1200
1400
1600
Type
Version
MCC
MCC
MCC
MCC
26-08
26-12
26-14
26-16
1B
io1 B /
io1 B /
io1 B /
io1 B /
8B
io8 B
io8 B
io8 B
io8 B
Version
MCD
MCD
MCD
MCD
26-08
26-12
26-14
26-16
1B
8B
4
5
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
3
6 7 1
5 4 2
MCC
Version 1 B
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 75°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
50
32
27
520
560
460
500
1350
1300
1050
1030
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
Features
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
3000
3600
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
• International standard package,
JEDEC TO-240 AA
• Direct copper bonded Al
2
O
3
-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Gate-cathode twin pins for version 1B
Applications
• DC motor control
• Softstart AC motor controller
• Light, heat and temperature control
Advantages
• Space and weight savings
• Simple mounting with two screws
• Improved temperature and power cycling
• Reduced protection circuits
419
3
1
5 4 2
MCD
Version 1 B
3
6
1
5 2
MCC
Version 8 B
3
1
5 2
MCD
Version 8 B
T
VJ
= T
VJM
repetitive, I
T
= 45 A
f =50 Hz, t
P
= 200 µs
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 300 µs
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-4