MII 75-12 A3
MID 75-12 A3
MDI 75-12 A3
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
1200
4.5
T
J
= 25°C
T
J
= 125°C
6
6.5
V
V
Dimensions in mm (1 mm = 0.0394")
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
R
thJC
R
thJS
V
GE
= 0 V
I
C
= 2 mA, V
CE
= V
GE
V
CE
= V
CES
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
4 mA
mA
±200
nA
2.2
3.3
0.5
0.22
100
70
500
70
7.6
5.6
0.66
2.7
V
nF
nF
nF
ns
ns
ns
ns
mJ
mJ
Inductive load, T
J
= 125°C
I
C
= 50 A, V
GE
= ±15 V
V
CE
= 600 V, R
G
= 22
W
with heatsink compound
0.33 K/W
K/W
Equivalent Circuits for Simulation
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
1.8
2.5
1.9
100
60
40
200
1.32
V
V
A
A
A
ns
0.66 K/W
K/W
Conduction
V
F
I
F
I
RM
t
rr
R
thJC
R
thJS
I
F
= 50 A, V
GE
= 0 V,
I
F
= 50 A, V
GE
= 0 V, T
J
= 125°C
T
C
= 25°C
T
C
= 80°C
I
F
= 50 A, V
GE
= 0 V, -di
F
/dt = 400 A/ms
T
J
= 125°C, V
R
= 600 V
with heatsink compound
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 20.1 mW
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 10.8 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.13 J/K; R
th1
= 0.323 K/W
C
th2
= 0.32 J/K; R
th2
= 0.008 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.10 J/K; R
th1
= 0.645 K/W
C
th2
= 0.18 J/K; R
th2
= 0.013 K/W
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2-4
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