Advanced Technical Information
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
VMK 165-007T
V
DSS
= 70 V
I
D25
= 165 A
R
DS(on)
= 7 mW
4 5
1
2
3
6 7
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D
I
DM
P
tot
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 6.8 kW
Continuous
Transient
Maximum Ratings
70
70
±20
±30
165
104
660
390
-40 ... +150
150
-40 ... +125
V
V
V
V
A
A
A
W
°C
°C
°C
V~
V~
TO-240 AA
E 72873
1
2
3
6
7
4
5
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, t
p
= 10 µs, pulse width limited by T
JM
T
C
= 25°C, T
J
= 150°C
1, 3 = Drain,
5, 6 = Gate,
2 = Common Source
4, 7 = Kelvin Source
50/60 Hz
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
Features
•
•
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
•
•
•
•
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
70
2
4
V
V
•
•
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
ceramic
base plate
Isolation voltage 3000 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V DC, V
DS
= 0
V
DS
= V
DSS
,
V
GS
= 0 V, T
J
= 25°C
V
DS
= 0.8 • V
DSS
, V
GS
= 0 V, T
J
= 125°C
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300 µs, duty cycle d
£
2 %
Applications
•
•
500 nA
200 µA
1 mA
6
7 mW
•
•
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Data per MOSFET unless otherwise stated.
Advantages
•
•
•
•
Easy to mount with two screws
Space and weight savings
High power density
Low losses
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1-2
023
IXYS [ IXYS CORPORATION ]
