MegaMOS
TM
FET
Module
N-Channel Enhancement Mode
VMO 400-02F
V
DSS
I
D25
R
DS(on)
1
11
10
= 200 V
= 418 A
Ω
= 4.2 mΩ
2
11
2
1
10
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 10 kΩ
Continuous
Transient
T
K
= 25°C
T
K
= 25°C, t
P
= 10
µs
T
C
= 25°C
T
K
= 25°C
Maximum Ratings
200
200
±20
±30
418
1672
2450
1640
-40 ...+150
150
-40 ... +125
V
V
V
V
A
A
W
W
°C
°C
°C
V~
V~
Features
q
q
1 = Drain
10 = Kelvin Source
2 = Source
11 = Gate
50/60 Hz
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
q
q
q
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250
g
q
International standard package
Direct Copper Bonded
Al
2
O
3
ceramic
base plate
Isolation voltage 3600 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
200
3
6
±500
T
J
= 25°C
T
J
= 125°C
V
V
q
q
q
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 12 mA
V
DS
= 20 V, I
D
= 120 mA
V
GS
=
±20
V DC, V
DS
= 0
V
DS
= V
DSS
,
V
GS
= 0 V
V
DS
= 0.8 • V
DSS
, V
GS
= 0 V
q
AC motor speed control for electric
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
power supplies
DC choppers
nA
Advantages
q
q
q
q
2.5 mA
12 mA
4.2 mΩ
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Easy to mount
Space and weight savings
High power density
Low losses
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXYS [ IXYS CORPORATION ]
