JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23
2SA1179
TRANSISTOR
(
PNP
)
Plastic-Encapsulate Transistors
SOT-23
FEATURES
. High breakdown voltage
MARKING: M
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
stg
Parameter
Value
-55
-50
-5
-150
200
-55-125
Units
V
V
V
mA
mW
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
otherwise specified)
MIN
-55
-50
-5
-0.1
-0.1
200
400
-0.5
-1.0
180
4
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
uA
uA
conditions
Ic=-10u A,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-10 u A,I
C
=0
V
CB
=-35V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-6V,I
C
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-6V,I
C
=-10mA
V
CB
=-6V,I
E
=0,f=1MHz
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
