JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
C
2SA1585E
TRANSISTOR
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
FEATURES
Low V
CE
(sat).V
CE
(sat) = -0.2V (Typ.)(I
C
/I
B
=-2A/-0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:AEQ, AER, AES
C
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
BACK
E
B
AEQ
B E
MAXIMUM RATINGS T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
-20
-20
-6
-2
150
150
-55-150
℃
℃
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
unless otherwise specified)
Test
conditions
MIN
-20
-20
-6
-0.1
-0.1
120
560
-0.5
240
35
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
= -50µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=- 50µA, I
C
=0
V
CB
=-20V , I
E
=0
V
EB
= -5V , I
C
=0
V
CE
=-2 V, I
C
= -0.1A
I
C
= -2A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
f
T
C
obo
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
