JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
2SC4115E
TRANSISTOR
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Low V
CE
(sat).V
CE
(sat) = 0.2V (Typ.)(I
C
/I
B
= 2A/0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:CFQ, CFR, CFS
C
TOP
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
BACK
E
B
CFQ
B E
MAXIMUM RATINGS T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Value
40
20
6
3
150
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
Test
conditions
MIN
40
20
6
0.1
0.1
120
560
0.5
290
25
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
= 50µA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=50µA, I
C
=0
V
CB
=30V ,
V
CE
=2 V,
I
E
=0
I
C
= 0.1A
V
EB
= 5V , I
C
=0
I
C
= 2A,
I
B
=0.1A
V
CE
=2V, I
C
=0.5 A
f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
R
180-390
f
T
C
obo
Q
120-270
CLASSIFICATION OF h
FE
Rank
Range
S
270-560
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
