JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061
TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES
Low saturation voltage
Excellent DC current gain characteristice
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
www.DataSheet4U.com
Paramenter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
80
60
5
3
2
150
-55-150
Units
V
V
V
A
W
℃
℃
T
j
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
otherwise
conditions
specified)
MIN
80
60
5
10
10
100
320
1
1.5
8
70
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=0.5A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.5A, f=5MHz
V
CB
=10V, I
E
=0, f=1MHz
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
