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2SD2150 参数 Datasheet PDF下载

2SD2150图片预览
型号: 2SD2150
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管NPN ) [TRANSISTOR NPN)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 24 K
品牌: JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
   
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
TRANSISTOR NPN
FEATURES
Power dissipation
: 0.5
W Tamb=25
P
CM
Collector current
I
CM
: 3
A
Collector-base voltage
V
(BR)CBO
: 40
V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
Test
unless otherwise specified
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
50
A,I
E
=0
Ic=
1
mA,I
B
=0
I
E
=
50
A,I
C
=0
V
CB
=
30
V,I
E
=0
V
EB
=
5
V,I
C
=0
V
CE
=
2
V,I
C
=
0.1
A
I
C
=
2
A,I
B
=100mA
V
CE
=
2
V,I
C
=0.5A ,f=
100
MHz
V
CB
=
10
V,I
E
=0,f=
1
MHz
40
20
6
0.1
0.1
180
560
0.5
290
25
A
A
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
120-270
CFQ
R
180-390
CFR
S
270-560
CFS