JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO – 220F
3CA2050
TRANSISTOR (PNP)
1. BASE
FEATURES
High Breakdown Voltage
General Purpose Switching and Amplification
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-180
-160
-6
-1.5
1.5
83
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
f
T
Test
conditions
Min
-180
-160
-6
-10
-10
60
50
-1
50
V
MHz
240
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-180V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-5V, I
C
=-0.2A
V
CE
=-5V, I
C
=-1.5A
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-0.05A
CLASSIFICATION OF h
FE (1)
RANK
RANGE
R
60-140
O
100-240
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
