JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13005L3D
TRANSISTOR (NPN)
FEATURES
Power switching applications
Good high temperature
Low saturation voltage
High speed switching
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
TO-126
1. BASE
2. COLLECTOR
3. EMITTER
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
350
200
9
9
1.25
150
-55~150
Unit
V
V
V
A
W
℃
CIRCUIT:
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
CE(sat)3
Base-emitter saturation voltage
Emitter-Collector forward voltage
Storage time
Transition frequency
V
BE(sat)1
V
BE(sat)2
V
ECF
Test conditions
I
C
= 1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=350V,I
E
=0
V
CE
=200V,I
B
=0
V
EB
=9V,I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=5mA
V
CE
=5V, I
C
=2A
V
CE
=5V, I
C
=4A
I
C
=1A,I
B
=0.2A
I
C
=2A,I
B
=0.4A
I
C
=4A,I
B
=1A
I
C
=1A,I
B
=0.25A
I
C
=2A,I
B
=0.5A
I
C
=2A
I
C
=250mA (UI9600)
V
CE
=10V, I
C
=0.5A
2.5
5
10
10
10
10
0.8
0.8
1
1.2
1.2
1.5
5
V
V
V
V
V
V
µs
MHz
Min
350
200
9
100
100
100
40
Typ
Max
Unit
V
V
V
µA
µA
µA
t
S
f
T
15-20
CLASSIFICATION OF h
FE(1)
Range
10-15
20-25
25-30
30-35
35-40
CLASSIFICATION OF
t
S
Rank
Range
A
2.5-3(µs )
B1
3-3.5(µs
)
B2
3.5-4 (µs )
C1
4-4.5 (µs )
C2
4.5-5 (µs )
A,Dec,2010
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
