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3DD13005-TO-220 参数 Datasheet PDF下载

3DD13005-TO-220图片预览
型号: 3DD13005-TO-220
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR( NPN )]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 284 K
品牌: JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
 浏览型号3DD13005-TO-220的Datasheet PDF文件第2页浏览型号3DD13005-TO-220的Datasheet PDF文件第3页  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005
TRANSISTOR( NPN
TO—220
FEATURES
Power dissipation
P
CM
:
1.5 W(Tamb=25℃)
Collector current
I
CM:
4A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
t
t
1.BASE
2.COLLECTOR
3.EMITTER
123
unless
Test
otherwise
specified)
TYP
MAX
UNIT
V
V
V
1000
100
1000
µA
µA
µA
conditions
MIN
700
400
9
Ic= 1000 µA,I
E
=0
Ic= 10
mA,I
B
=0
I
E
= 1000 µA,I
C
=0
V
CB
= 700 V I
E
=0
V
CE
= 400 V I
B
=0
V
EB
=
9
V I
C
=0
V
CE
= 5 V, I
C
= 1000mA
I
C
=2000m A,I
B
=500 mA
I
C
=2000m A, I
B
= 500mA
V
CE
=10 V, IC=500mA
10
40
0.6
1.6
V
V
MHz
0.9
4
µs
µs
T
f = 1MHz
I
B1
=-I
B2
=0.4A, I
C
=2A
5
f
s
V
CC
=120V
CLASSIFICATION OF h
FE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40