JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F
3DD3852
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
TO-220F
FEATURES
High Current Gain
Saturation Voltage Low
Power dissipation
P
CW
: 2 W (Tamb=25
℃
)
25 W (Tcase=25
℃
)
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
Parameter
1. BASE
2. COLLECTOR
3. EMITTE
Value
80
60
6
3
150
-55-150
Units
V
V
V
A
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
*Pulse test: t
p
≤300μS, δ≤0.02.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
*
f
T
Test
unless
otherwise
specified)
MIN
80
60
6
10
10
100
600
1
7
V
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=4V, I
C
=500mA
I
C
=3A, I
B
=300mA
V
CE
=12V, I
C
=200mA
CLASSIFICATION OF
Rank
Range
h
FE
O
100-200
P
160-320
Q
300-600
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
