JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
3DK2222A
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907ALT1)
TRANSISTOR ( NPN )
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
MARKING: 1P1
MAXIMUM RATINGS*
T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
unless
Test
Value
75
40
6
600
300
-55to+150
otherwise
specified）
MIN
75
40
6
TYP
Units
V
V
V
mA
mW
℃
MAX
UNIT
V
V
V
0.1
0.1
0.1
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
H
FE(1)
DC current gain
H
FE(2)
H
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
V
CE
(sat)
V
BE
(sat)
conditions
I
E
=0
I
C
= 10
μ
A，
I
C
= 10mA， I
B
=0
I
E
=10
μ
A， I
C
=0
V
CB
=70 V , I
E
=0
V
CE
=60V ,
V
EB
= 3V ,
V
BE(off)
=3V
I
C
=0
μ
A
μ
A
μ
A
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 500mA
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
I
C
=500 mA, I
B
= 50mA
V
CE
=20V, I
C
= 20mA
f=
100MHz
100
40
42
300
0.6
0.3
1.2
300
10
25
225
60
V
V
MHz
nS
nS
nS
nS
f
T
t
d
t
r
t
S
t
f
V
CC
=30V, V
BE(off)
=-0.5V
I
C
=150mA , I
B1
= 15mA
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
=15mA
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
