JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
3DK2222A
FEATURE
Power dissipation
P
CM
:
0.625
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR(NPN )
1. EMITTER
2. BASE
W(Tamb=25℃)
3. COLLECTOR
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Value
75
40
6
600
625
150
-55-150
1 2 3
Units
V
V
V
mA
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Junction and Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time
Transition frequency
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)
t
stg
unless
Test
otherwise
specified)
MIN
75
40
6
10
10
10
100
40
42
0.6
0.3
1.2
225
300
V
V
V
ns
MHz
300
MAX
UNIT
V
V
V
nA
nA
nA
conditions
Ic= 10uA , I
E
=0
I
C
= 10 mA , I
B
=0
I
E
= 10uA, I
C
=0
V
CB
= 60 V , I
E
=0
V
CE
= 60 V , V
EB(OFF)
=3V
V
EB
= 3 V ,
V
CE
=10 V,
V
CE
=10 V,
V
CE
=10 V,
I
C
=0
I
C
= 150mA
I
C
= 0.1mA
I
C
= 500mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
V
CC
=30V, I
C
=150mA, I
B1
=I
B2
=15mA
V
CE
= 20 V, I
C
= 20mA,
f =
100MHz
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
L
100-200
H
200-300
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
