JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42
TRANSISTOR（ NPN
）
TO—92
FEATURES
Power dissipation
P
CM
: 0.625
W（Tamb=25℃）
Collector current
I
CM
: 0.5
A
Collector-base voltage
V
(BR)CBO
: 300
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
H
FE
（
3
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
unless
Test
otherwise
MIN
specified）
TYP
MAX
UNIT
V
V
V
0.25
0.1
conditions
Ic= 100
μ
A， I
E
=0
Ic=
I
E
=
1 mA， I
B
=0
100
μ
A， I
C
=0
I
E
=0
V I
C
=0
，
300
300
5
V
CB
= 200 V
V
EB
=
5
μ
A
μ
A
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 10V, IC = 10 mA
V
CE
= 10 V, I
C
=30 mA
I
C
= 20 mA, I
B
= 2 mA
I
C
= 20m A,
V
CE
=20 V,
f =
30MHz
I
B
= 2 mA
I = 10 mA
C
60
80
75
0.2
0.9
50
V
V
MHz
250
f
T
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
