JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92
TRANSISTOR( PNP
)
TO—92
FEATURES
Power dissipation
P
CM
: 0.625W(Tamb=25℃)
Collector current
I
CM:
-0.5 A
Collector-base voltage
V
(BR)CBO
: -300V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
(
1
)
DC current gain
h
FE
(
2
)
h
FE
(
3
)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
Test
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
otherwise
MIN
specified)
TYP
MAX
UNIT
V
V
V
-0.25
-0.1
conditions
Ic= -100
μ
A,I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
= -200 V
I
E
=0
-300
-300
-5
μ
A
μ
A
V
EB
= -5 V, I
C
=0
V
CE
= -10 V, IC=- 1 mA
V
CE
= -10V, I
C
= -10 mA
V
CE
= -10 V, I
C
= -80 mA
I
C
= -20 mA, IB= -2 mA
I
C
= -20 mA, IB= -2 mA
V
CE
= -20 V, IC= -10 mA
f =
30MHz
50
60
80
60
250
-0.2
-0.9
V
V
MHz
f
T
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250