JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5817W
FEATURES:
Power dissipation
P
D
:
450
mW(Tamb=25℃)
Collector current
I
F
:
1
A
Collector-base voltage
V
R
:
20
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
1.05
SCHOTTKY BARRIER DIODE
SOD-123
2.70
1.6
Unit:mm
MARKING:SJ
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless
otherwise
specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V
(BR)
I
R
V
F
C
D
Test
I
R
= 1mA
V
R
=20V
I
F
=1A
I
F
=3A
V
R
=4V
conditions
MIN
20
MAX
UNIT
V
1
0.45
0.75
f=1MHz
120
0.55
3.70
�½�A
V
�½�F