JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5818WS
FEATURES
Power dissipation
P
D
:
200
mW (Tamb=25℃)
2.70
1.6
SCHOTTKY BARRIER DIODE
SOD-323
+
1.05
Collector current
1
A
I
F
:
Collector-base voltage
V
R
:
30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
MARKING: SK
-
0.55
3.70
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V
(BR)
I
R
V
F
C
D
unless
Test
otherwise
specified)
MIN
30
1
0.55
0.875
120
MAX
UNIT
V
conditions
I
R
= 1mA
V
R
=30V
I
F
=1A
I
F
=3A
mA
V
V
R
=4V,
f=1MHz
pF