JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B5819W
FEATURES:
Power dissipation
P
D
:
450
mW(Tamb=25℃)
Collector current
I
F
:
1
A
Collector-base voltage
V
R
:
40
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
1.05
SCHOTTKY BARRIER DIODE
SOD-123
2.70
1.6
Unit:mm
MARKING:SL
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless
otherwise
specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR)
I
R
Test
I
R
= 1mA
V
R
=40V
V
R
=4V
V
R
=6V
I
F
=0.1A
I
F
=1A
I
F
=3A
conditions
MIN
40
MAX
UNIT
V
1
0.05
0.075
0.45
0.6
0.9
f=1MHz
120
Forward voltage
V
F
Diode capacitance
C
D
V
R
=4V
0.55
3.70
�½�A
V
�½�F