JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5819WS
FEATURES
Power dissipation
P
D:
200
mW (Tamb=25℃)
2.70
1.6
SCHOTTKY BARRIER DIODE
SOD-323
+
1.05
Collector current
1
A
I
F
:
Collector-base voltage
V
R
:
40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
-
0.55
3.70
MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless
otherwise
specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR)
I
R
Test
conditions
I
R
= 1mA
V
R
=40V
V
R
=4V
V
R
=6V
I
F
=0.1A
I
F
=1A
I
F
=3A
MIN
40
MAX
UNIT
V
1
0.05
0.075
0.45
0.6
0.9
120
mA
Forward voltage
V
F
V
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF