JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
BAT54M
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
-
SCHOTTKY DIODE
TOP
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
Ultra-Small Surface Mount Package
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Available in Lead Free Version
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:
-
L1
1. ANODE
2. NC
3.CATHODE
+
NC
-
BACK
NC
+
L1
+
NC
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current
Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Junction temperature
Storage temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
I
FRM
I
FSM
P
d
RθJA
T
J
T
STG
200
300
600
150
833
125
-65-125
mA
mA
mA
mW
℃/W
℃
℃
30
V
Limits
Unit
Notes:1.
Device mounted on FR-4 PC board with recommended pad layout
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
