JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV199DW
FEATURES
Power dissipation
P
CM:
0.2
W (Tamb=25℃)
Multi-Chip DIODES
SOT-363
Collector current
I
F
:
200
mA
Collector-base voltage
V
R
:
85
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
MARKING:K52
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR) R
I
R
unless
otherwise
specified)
MIN
85
5
0.9
1.0
1.1
1.25
TYP
MAX
UNIT
V
nA
Test
conditions
I
R
= 100µA
V
R
=75V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V
f=1MHz
Forward voltage
V
F
V
Junction capacitance
C
j
2
pF
I
F
=I
R
=10mA
Reveres recovery time
t
rr
I
rr
=0.1ХI
R
R
L
=100Ω
3
nS
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
