JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC347
FEATURES
Power dissipation
P
CM
: 0.3 W（Tamb=25℃）
Collector current
I
CM
:
0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless
TRANSISTOR
(
NPN)
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
otherwise
specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CB
O
Test
conditions
MIN
50
45
5
TYP
MAX
UNIT
V
V
V
Ic= 100μA
，
I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 100μA， I
C
=0
V
CB
=50V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
=5 V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
=5V,I
C
=10mA, f=30MHz
V
(BR)CE
O
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
0.1
0.1
0.1
40
450
0.3
1
125
μA
μA
μA
V
V
MHz
f
T
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
