JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350
FEATURES
Power dissipation
P
CM
: 0.3 W（Tamb=25℃）
Collector current
I
CM
:
-0.1 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless
TRANSISTOR (PNP)
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
otherwise
specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
V
V
Ic= -100μA
，
I
E
=0
I
C
= -1mA, IB=0
I
E
= -100μA， I
C
=0
V
CB
=-50V, I
E
=0
V
CE
=-35V, I
B
=0
V
EB
= -3V, I
C
=0
V
CE
=-5 V, I
C
= -2mA
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
=-5 V,I
C
=-10mA,
f=30MHz
-0.1
-0.1
-0.1
40
450
-0.3
-1
125
μA
μA
μA
V
V
MHz
f
T
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
