JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
B0520LW,B0530W,B0540W
SCHOTTKY RECTIFIER
Features
·
·
·
Low Forward Voltage Drop
Guard Ring Construction for
Transient Protection
High Conductance
2.70
1.6
SOD-123
Marking:
B0520LW:SD
B0530W:SE
B0540W:SF
Unit:mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T = 100°C
L
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Power Dissipation (Note 1)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Voltage Rate of Change
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
d
R
qJA
T
j,
T
STG
dv/dt
B0520LW
20
14
B0530W
30
21
0.5
5.5
410
244
-65 to +125
1000
B0540W
40
28
Unit
V
V
A
A
mW
°C/W
°C
V/ms
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Minimum Reverse Breakdown Voltage (Note 2)
Symbol
V
(BR)R
B0520LW
20
¾
¾
0.300
0.385
¾
0.220
0.330
¾
75
¾
250
¾
¾
5.0
8.0
¾
Junction Capacitance
Notes:
C
j
1. Valid provided that leads are kept at ambient temperature.
2. Pulse Test: Pulse width = 300ms, Duty Cycle
£
2%.
B0530W
¾
30
¾
0.375
0.430
¾
¾
¾
¾
¾
20
¾
130
¾
¾
¾
¾
170
B0540W Unit
¾
¾
40
¾
0.510
0.620
¾
0.460
0.610
¾
¾
10
¾
20
¾
5.0
13
V
Test Conditions
I
R
= 250mA
I
R
= 130mA
I
R
= 20mA
I
F
= 0.1A, T
j
= 25°C
I
F
= 0.5A, T
j
= 25°C
I
F
= 1.0A, T
j
= 25°C
I
F
= 0.1A, T
j
= 100°C
I
F
= 0.5A, T
j
= 100°C
I
F
= 1.0A, T
j
= 100°C
V
R
= 10V, T
j
=
V
R
= 15V, T
j
=
V
R
= 20V, T
j
=
V
R
= 30V, T
j
=
V
R
= 40V, T
j
=
25°C
25°C
25°C
25°C
25°C
Maximum Forward Voltage Drop
(Note 2)
V
FM
V
Maximum Leakage Current
(Note 2)
mA
I
RM
mA
pF
V
R
= 10V, T
j
= 100°C
V
R
= 20V, T
j
= 100°C
V
R
= 40V, T
j
= 100°C
f = 1MHz, V
R
= 0V DC
0.55
3.70
1.05
1 /2
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
