JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
C1815LT1
FEATURES
Power dissipation
P
CM
:
0.2
W（Tamb=25℃）
Collector current
I
CM:
0.15
A
Collector-base voltage
V
(BR)CBO
: 60
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
TRANSISTOR（ NPN
）
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
unless
Test
conditions
I
E
=0
MIN
60
50
TYP
０．４
Unit : mm
MAX
UNIT
V
V
Ic= 100
μ
A，
Ic= 0.1mA， I
B
=0
V
CB
=60 V , I
E
=0
V
CE
=50 V , I
B
=0
V
EB
= 5V ,
I
C
=0
0.1
0.1
0.1
130
400
0.25
1
μ
A
μ
A
μ
A
V
CE
= 6V, I
C
= 2mA
I
C
=100 mA, I
B
= 10m A
I
C
=100 mA, I
B
= 10m A
V
CE
=10V,
I = 1mA
C
V
V
Transition frequency
f
T
f=
30MHz
80
MHz
CLASSIFICATION OF h
FE(1)
Ｒ�½��½��½�
Ｒ�½��½��½��½�
Ｌ
１３０－２００
Ｈ
２００－４００
DEVICE MARKING :
C1815LT1=HF
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
