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C2611-TO-251 参数 Datasheet PDF下载

C2611-TO-251图片预览
型号: C2611-TO-251
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR( NPN )]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 185 K
品牌: JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
 浏览型号C2611-TO-251的Datasheet PDF文件第2页浏览型号C2611-TO-251的Datasheet PDF文件第3页  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-251 Plastic-Encapsulate Transistors
C 2611
TRANSISTOR( NPN
TO—251
FEATURES
Power dissipation
P
CM
: 1
W(Tamb=25℃)
Collector current
I
CM
: 0.2
A
Collector-base voltage
V
(BR)CBO
: 600
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS
Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
1
DC current gain
h
FE
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
Test
1. EMITTER
2.COLLECTOR
3.BASE
    
1
2
3
conditions
MIN
600
400
7
TYP
MAX
UNIT
V
V
 V
Ic= 100μA
,I
E
=0
I
C
= 1
mA , I
B
=0
I
E
= 100
μA,I
C
=0
V
CB
= 600 V , I
E
=0
V
CE
= 400 V , I
B
=0
V
EB
= 7 V ,
V
CE
= 20
I
C
=0
100
200
100
10
5
0.5
1.2
40
μA
μA
μA
V, I
C
= 20m A
V
CE
= 10V, I
C
= 0.25 mA
I
C
= 50mA, I
B
= 10 m A
I
C
= 50 mA, I
B
= 10m A
V
CE
= 20 V, I =20mA
C
V
V
Transition frequency
f
T
8
MHz
f =
1MHz
Fall time
Storage time
t
f
I
C
=50mA,
I
B1
=-I
B2
=5mA,
0.3
1.5
μs
μs
t
S
V
CC
=45V
CLASSIFICATION OF h
FE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40