JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
D882
FEATURES
1.BASE
TRANSISTOR（NPN）
TO—251
Power dissipation
P
CM
:
1.25W（Tamb=25℃）
Collector current
I
CM:
3A
Collector-base voltage
V
(BR)CBO
: 40V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE (sat)
V
BE (sat)
f
T
2.COLLECTOR
3.EMITTER
1
2
3
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
1
10
1
µA
µA
µA
conditions
MIN
40
30
6
Ic= 100
μ
A， I
E
=0
Ic= 10 mA， I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
= 40 V， I
E
=0
V
CE
= 30 V， I
B
=0
V
EB
= 6 V， I
C
=0
V
CE
= 2 V, IC= 1A
V
CE
= 2 V, I
C
= 100m A
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V, Ic=0.1A
f =10MHz
60
32
400
0.5
1.5
50
V
V
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
